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N-CHANNEL 30V - 0.005 - 60A D2PAK STripFETTM III POWER MOSFET FOR DC-DC CONVERSION
TYPE STB120NH03L
s s s s s s
STB120NH03L
VDSS 30 V
RDS(on) <0.0055
ID 60 A(#)
TYPICAL RDS(on) = 0.005 @ 10 V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 1
D2PAK TO-263 (Suffix "T4")
DESCRIPTION
The STB120NH03L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC-DC CONVERTERS
Ordering Information
SALES TYPE STB120NH03LT4
s
MARKING B120NH03L
PACKAGE TO-252
PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(#) ID(#) IDM(*) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 20 60 60 240 115 0.77 700 -55 to 175
(1) Starting T j = 25 oC, ID = 30A, VDD = 15V
Unit V V V A A A W W/C mJ C
(*) Pulse width limited by safe operating area. (#) Value limited by wire bonding
July 2003
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STB120NH03L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.30 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA
VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 30 A ID = 30 A Min. 1 Typ. 1.8 0.005 0.006 Max. 2.5 0.0055 0.0105 Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions
VDS = 10 V ID = 30 A
Min.
Typ. 40 4100 680 70
Max.
Unit S pF pF pF
VDS = 15V f = 1 MHz VGS = 0
f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain
1.3
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STB120NH03L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*)
Symbol td(on) tr Qg Qgs Qgd Qoss(1) Qgls(2) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Third-quadrant Gate Charge Test Conditions ID = 30 A VDD = 15 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD=15V ID=60A VGS=10V Min. Typ. 16 95 57 11.8 7.3 27 55 77 Max. Unit ns ns nC nC nC nC nC
VDS = 16 V VDS < 0 V
VGS= 0 V VGS= 10 V
SWITCHING OFF(*)
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 15 V RG = 4.7, ID = 30 A VGS = 10 V Min. Typ. 48 23 Max. Unit ns ns
SOURCE DRAIN DIODE(*)
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 46 64 2.8 Test Conditions Min. Typ. Max. 60 240 1.4 62 86
Appendix A
Unit A A V ns nC A
di/dt = 100A/s ISD = 60 A Tj = 150C VDD = 30 V (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by Tjmax
(1) Q oss = Coss* Vin , Coss = Cgd + Cds . See (2) Gate charge for synchronous operation
Safe Operating Area
Thermal Impedance
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STB120NH03L
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB120NH03L D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181
0.106
0.009 0.037 0.067 0.024 0.054 0.368
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STB120NH03L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
* on sales type
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STB120NH03L
APPENDIX A Buck Converter: Power Losses Estimation
SW1
SW2
The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performan comparison, of how different pairs of devices ce affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is emoved to allow for a safer working junction r temperature. The low side (SW2) device requires: * * * * * Very low RDS(on) to reduce conduction losses Small Qgls to reduce the gate charge losses Small Coss to reduce losses due to output capacitance Small Qrr to reduce losses on SW1 during its turn-on The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires: * Small Rg and Ls to allow higher gate current peak an to limit the voltage d feedback on the gate * Small Qg to have a faster commutation and to reduce gate charge losses * Low RDS(on) to reduce the conduction losses.
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STB120NH03L
High Side Switch (SW1)
Low Side Switch (SW2)
Pconduction
R DS(on)SW1 * I 2 * d L
R DS(on)SW2 * I 2 * (1 - d ) L
Pswitching
Vin * (Q gsth(SW1) + Q gd(SW1) ) * f *
IL Ig
Zero Voltage Switching
Pdiode
Recovery
Not Applicable
1
Vin * Q rr(SW2) * f
Conduction
Not Applicable
Vf(SW2) * I L * t deadtime * f Q gls(SW2) * Vgg * f
Pgate(Q G )
Q g(SW1) * Vgg * f
PQoss
Vin * Q oss(SW1) * f 2
Vin * Q oss(SW2) * f 2
Parameter d Qgsth Qgls Pconduction Pswitching Pdiode Pgate PQoss
Meaning Duty-cycle Post threshold gate charge Third quadrant gate charge On state losses On-off transition losses Conduction and reverse recovery diode losses Gate drive losses Output capacitance losses
1
Dissipated by SW1 during turn-on
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STB120NH03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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